Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

Chip manufacturers are warning of a shortage in DRAM, NAND and probably HBM memory chips because demand from cloud providers is outstripping supply. The problem is compounded by the Trump ...

Researchers from McMaster University and the University of Pittsburgh have created the first functionally complete logic gate—a NAND gate (short for "NOT AND")—in a soft material using only beams of ...

Samsung Electronics, SK hynix, Kioxia, Micron and other four global NAND flash manufacturers are collectively cutting NAND flash supply in the second half of this year. Analysts say production losses ...

NAND flash prices have been on a roller-coaster this year, and they’re heading only one way—up. According to Phison CEO Khein-Seng Pua, the cost of NAND memory chips has more than doubled in just six ...

The global boom in artificial intelligence has triggered a severe shortage of essential storage chips, doubling prices in just six months, according to Khein-Seng Pua, CEO of Phison Electronics. The ...

Analisa Novak is a content producer for CBS News and the Emmy Award-winning "CBS Mornings." She specializes in covering live events and exclusive interviews for the show. Analisa is a United States ...

Facepalm: Samsung is reportedly raising DRAM and NAND prices by up to 30 percent, following similar hikes from SanDisk and Micron. SanDisk raised NAND flash prices by more than 10 percent a few weeks ...

Memory manufacturers are swiftly following SanDisk's announcement of a 10% price increase for NAND products, signaling a broader industry move toward higher pricing amid expected supply shortages ...

SK hynix says it has begun mass production of its 321-layer 2-terabit (Tb) quad-level cell (QLC) NAND flash memory, which marks the first implementation of QLC NAND to employ more than 300 layers.