ROHM has developed an innovative Schottky barrier diode (SBD) that overcomes the traditional forward voltage (V F)/reverse current (IR) trade-off. This way, it delivers high reliability protection for ...
Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...
The DK5V100R15S from Shenzhen DongKe Semiconductor provides a compelling and drop-in alternative to Schottky rectifiers. In power electronics, minimizing switching losses and improving thermal ...
Abstract: X-ray irradiation is performed in order to study the behavior of lateral hetero-junction Schottky diode to help predict the effect of X-ray on recessed gate high electron mobility transistor ...
Abstract: SiC has a higher critical electric field compared to Si, which is promising for power applications. However, the susceptibility of SiC Schottky barrier diodes (SBDs) to heavy ions is ...
Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...
Creative Commons (CC): This is a Creative Commons license. Attribution (BY): Credit must be given to the creator. This study presents the fabrication and characterization of flexible Schottky diodes ...
The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...
Infineon expands 2000V G5 product family with new devices available with current ratings ranging from 10 to 80 A Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback