Abstract: A 10-b self-timed SAR A/D converter is designed in 28-nm FDSOI CMOS to convert at 500 MS/s. It maintains this effective number of bits across an input bandwidth of 2 GHz, because it will be ...
Abstract: This work describes an SRAM architecture with in-memory generation of both dynamic and multi-bit static entropy. This inexpensively extends complete key generation capabilities to any system ...
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