IEEE

Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs

Abstract: The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the ...
IEEE

Investigation of Heavy-Ions-Induced Leakage Current Modes and Degradation Mechanism in SiC MOSFETs Under Complex Heavy Ion Conditions

Abstract: A comprehensive investigation is conducted to explore the heavy-ions-induced leakage current (HIILC) modes and degradation mechanism in silicon carbide (SiC) MOSFET. The ions used in ...

Journey to the center of a quantized vortex: How microscopic mutual friction governs superfluid dissipation

Step inside the strange world of a superfluid, a liquid that can flow endlessly without friction, defying the common-sense ...

Why a chiral magnet is a direction-dependent street for electrons

RIKEN physicists have discovered for the first time why the magnitude of the electron flow depends on direction in a special ...