Electropages

Signal relays deliver a sharper response in a smaller package

OMRON Electronic Components Europe has announced new G3VM MOSFET relays with a tiny footprint, low output capacitance, and fast response for designers tackling demanding applications, including ...
Eureka

OMRON Introduces Ultra-Compact MOSFET Relays for High-Speed Test Equipment

OMRON Electronic Components Europe has launched a new range of MOSFET relays for test and measurement, designed to help ...
New Electronics

OMRON’s ultra-compact MOSFET relays target high-speed test equipment

OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching ...
Electronic Design

Space-Rated MOSFET Family Adds First Rad-Tolerant P-Channel Device

P-channel power MOSFETs are now part of Infineon Technologies’ mix of radiation-tolerant MOSFETs for low-Earth-orbit (LEO) systems. Included in the company’s expanding portfolio of devices for ...
Business Wire

Magnachip Unveils Its First 8th-Generation MXT LV MOSFET Designed with Super-Short Channel FET II

SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor ...
powerelectronicsnews

Infineon Unveils Rad-Tolerant P-Channel MOSFET

The latest addition from Infineon brings a compelling balance of performance, cost-effectiveness, and availability to the NewSpace market. In an interview with Power Electronics News, Jutta ...
Compoundsemiconductor.net

High inversion channel mobility in 1.4 kV vertical GaN MIS-FET

USTC team reports 1.4 kV/2.0 mΩ·cm 2 regrowth-free vertical GaN trench MIS-FET featuring high inversion channel mobility of 205 cm 2 /V·s with monocrystal-like AlN nitridation interfacial-layer To ...