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Abstract: RF Power Amplifiers (PA) based on single GaN/SiC High Electron Mobility Transistors (HEMT) operating at 100 VDC in CW or 145 V in pulse mode are reported here with 2x 50 mm gate periphery ...
Abstract: In high-efficiency Class E amplifiers matching circuits are commonly used to transform usually constant load resistance to nominal or off-nominal resistance of the amplifier to ensure its ...
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