Worst Case Heavy Ion Testing Conditions for Normally Off GaN-Based High Electron Mobility Transistor
Abstract: Single Event Effect of GaN HEMT devices is usually done using the same testing conditions as the one developed and validated a long time ago for MOSFETs components. This paper presents two ...
Abstract: The increasing need for swift decision-making and response in condition monitoring systems is characterized by agility, scalability, and the ability to address previously unforeseen events.
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