Abstract: Anew single event burnout (SEB) hardened AlGaN/GaN structure with a thin barrier interlayer (IL) is presented in this work. The proposed hardened structure is compared with the simulation ...
Abstract: Heavy ion-induced single-event burnout (SEB) is investigated in high-voltage silicon carbide power MOSFETs. Experimental data for 1200-V SiC power MOSFETs show a significant decrease in SEB ...
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