Vertical GaN power devices could benefit from better p-type contacts, realised by magnesium implantation and ultra-high-pressure annealing Engineers from North Carolina State University, Adroit ...

Researchers at Nagoya University in Japan have created the first functional pn diodes using Ga 2 O 3. Their method 'P-type layer formation study for Ga 2 O 3 by employing Ni ion implantation with ...

A recent study published in Light: Science & Applications introduced a new method for determining the PN junction depth in a silicon wafer. This technique works at nanometer-scale resolution and is ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

Perioperative FLOT (fluorouracil, leucovorin, oxaliplatin, and docetaxel) is a standard therapy for resectable gastric and gastroesophageal junction adenocarcinomas, but recurrence rates remain high.

Abstract: This article details a comparison between all-inorganic thin-film piezotronic p-n/n-p heterojunction diodes as wearable pressure sensors, with a comprehensive exploration of how the p-n ...

The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the “atomic level manufacturing” of semiconductors. The basic idea of ...

In this tutorial, we propose a virtual/computational experiment, relateated to a PN junction, in the Mathematica computing environment. Now we can reconstruct the voltage-current characteristic of the ...

In the previous tutorial, we discussed the physical mechanism that determines the increasing trend of the reverse saturation current of a pn junction, as a function of temperature. In this article, we ...

The two research institutes described the triple junction device’s features in a new paper. The cell relies on a top cell based on gallium indium phosphide (GaInP), a middle cell relying on gallium ...