Abstract: I–V characteristics of Schottky barrier diodes (SBDs) in low forward bias and reverse bias voltages are critical in low-power and high-speed SBD-based circuits. Accurate modeling of I–V in ...
Abstract: Experimental heavy-ion responses of silicon carbide (SiC) junction barrier Schottky (JBS) diodes are presented. Measured data indicate that heavy ions having range less than the epitaxial ...
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