Abstract: Because of the wide application of die top interconnects with Cu bonding wire, the weak points in SiC MOSFET power modules presented a huge difference compared to the conventional modules ...
The need to move beyond 12 V in automotive systems has been apparent for years, but now, finally, consensus seems to have ...
Abstract: In this article, an innovative layout is introduced to reduce the stray inductance of the multichip power modules (MCPMs) through reverse coupling of current in parallel power loops, which ...
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