Abstract: This work studies a 3-D stacking approach to silicon carbide (SiC) integrated circuit (IC) chips using flip-chip technology with gold (Au) stud bumps for high-temperature (up to 600 °C) ...
Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...