Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs
Abstract: The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the ...
Abstract: With the gradual increase in high capacity doubly fed induction generators (DFIGs) in recent years, turn-to-turn short-circuit (TTSC) faults have become a greater threat. Notably, owing to ...
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