The tensily strained high Ge content (85%) GeSi multi-channels stacked on the Si channel with channel size optimization have good subthreshold behaviors (SS, DIBL, and Ioff), and meanwhile maintain ...
As last-minute shoppers rush to the stores — or click the order button on their phones and computers, then anxiously await ...
Abstract: This study introduces a breakthrough achievement of 0.1-Gb/mm2 wing-shaped high-density embedded 3-D via resistive random access memory (Via RRAM) in TSMC’s 16-nm FinFET CMOS logic process.
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