A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...
RF Micro Devices (News - Alert) announced that the company has qualified its GaN1 power semiconductor process technology for 65V operation. For emerging defense and commercial applications, amplifier ...
In Gallium Nitride (GaN) implanted with a small amount of magnesium (Mg), NIMS succeeded for the first time in visualizing the distribution and optical behavior of the implanted Mg at the nanoscale ...
TORRANCE, Calif. and HYDERABAD, India, Dec. 8, 2025 /PRNewswire/ -- Navitas Semiconductor Corporation (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ ...
Gallium nitride (GaN) and its wide bandgap cousin silicon carbide (SiC) have started to disrupt power electronics. Ironically, just a few years ago, GaN was considered useless as a semiconductor, ...
Thermal treating of metallic magneiusm on gallium nitride semiconductor results in the formation of a distinctive superlattice structure. Magnesium, nitrogen, gallium atoms are shown in orange, blue, ...
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