Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

After decades of domination by silicon, silicon carbide (SiC) is replacing it as the gold standard in high-voltage power electronics, including in traction inverters at the heart of electric vehicles ...

MALVERN, Pa., Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power modules designed specifically for on-board charger ...

Inverter gate driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents, coupled with high voltage safety standards ...

STMicroelectronics (NYSE: STM) is introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. The Generation 4 technology brings new benchmarks in power efficiency, power ...